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PD-96143
IRF7706GPBF
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET(R) Power MOSFET VDSS
-30V
RDS(on) max
22m@VGS = -10V 36m@VGS = -4.5V
ID
-7.0A
-5.6A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de9
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signer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -7.0 -5.7 -28 1.51 0.96 0.01 20 -55 to + 150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
83
Units
C/W
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04/21/08
IRF7706GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- -1.0 6.9 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.015 --- --- --- --- --- --- --- --- 48 8.5 8.4 17 46 244 122 2211 339 207
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 22 VGS = -10V, ID = -7.0A m 36 VGS = -4.5V, ID = -5.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 72 ID = -7.0A --- nC VDS = -15V --- VGS = -10V 25 VDD = -15V, VGS = -10V 69 ID = -1.0A ns 366 RG = 6.0 183 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 34 32 -1.5 A -28 -1.2 51 48 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10sec.
Pulse width 300s; duty cycle 2%.
2
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IRF7706GPBF
100
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
100
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
-2.5V
1
1
-2.5V 20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -7.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1.0
TJ = 25 C
1
0.5
0.1 2.0
V DS= -15V 20s PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 5.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7706GPBF
3200 2800
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
2400 2000 1600 1200 800 400 0
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16 14 12 10 8 6 4 2 0
ID = -7.0A
V DS=-24V V DS=-15V
Ciss
Coss Crss
1 10 100
-VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
-ID , Drain Current (A) I
100us 10 1ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.5 0.8 1.1 1.4
-VSD ,Source-to-Drain Voltage (V)
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7706GPBF
8.0 7.0
VDS V GS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
-ID , Drain Current (A)
6.0 5.0 4.0 3.0
D.U.T.
+
Fig 10a. Switching Time Test Circuit
2.0 1.0
VGS
td(on) tr t d(off) tf
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 PDM t1 t2
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
V DD
5
IRF7706GPBF
( , RDS(on) Drain-to -Source On Resistance)
0.060
RDS ( on ) , Drain-to-Source On Resistance ) (
0.100
0.080
0.040
0.060 VGS = -4.5V 0.040 VGS = -10V 0.020
ID = -7.0A
0.020
0.000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.000 0 5 10 15 20 25 30 35 40 45 50 55 60 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
10 V
D.U.T.
-
VDS
IRF7706GPBF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7706GPBF
TSSOP8 Part Marking Information
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F7706G
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2008
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